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| STP21NM60N-STF21NM60N-STW21NM60N STB21NM60N - STB21NM60N-1 N-CHANNEL 600V - 0.19 - 17 A TO-220/FP/D/IPAK/TO-247 SECOND GENERATION MDmeshTM MOSFET Table 1: General Features TYPE STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N Figure 1: Package RDS(on) < < < < < 0.24 0.24 0.24 0.24 0.24 ID 17 A 17 A 17 A (*) 17 A 17 A TO-220 VDSS 660 660 660 660 660 V V V V V 3 1 3 1 2 3 1 2 DPAK 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TO-220FP DESCRIPTION The STx21NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters 3 12 3 2 1 IPAK TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS The MDmeshTM II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order Codes SALES TYPE STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N MARKING B21NM60N B21NM60N F21NM60N P21NM60N W21NM60N PACKAGE D2PAK I2PAK TO-220FP TO-220 TO-247 PACKAGING TAPE & REEL TUBE TUBE TUBE TUBE Rev.3 October 2005 1/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Table 3: Absolute Maximum ratings Symbol Parameter Value TO-220 / / I2PAK / TO-247 VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) Viso Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature --55 to 150 150 17 10 64 140 1.12 15 2500 600 600 25 17 (*) 10 (*) 64 (*) 30 0.23 D2PAK TO-220FP V V V A A A W W/C V/ns V C Unit ( ) Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed (1) ISD 16 A, di/dt 400 A/s, VDD=80% V(BR)DSS Table 4: Thermal Data TO-220 / DPAK / IPAK / TO-247 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.89 62.5 300 TO-220FP 4.21 C/W C/W C Table 5: Avalanche Characteristics Symbol IAS EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAS, VDD = 50 V) Max Value 8.5 610 Unit A mJ 2/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol V(BR)DSS dv/dt(2) IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Drain Source Voltage Slope Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions Min. ID = 1mA, VGS = 0 Vdd=480V, Id=17A, Vgs=10V VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 250 A VGS = 10V, ID = 8.5 A 2 3 0.190 600 48 1 10 100 4 0.24 Value Typ. Max. V V/ns A A nA V Unit (2) Characteristic value at turn off on inductive load Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss Coss eq. (*) td(on) tr td(off) tf Qg Qgs Qgd Rg Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Off-voltageRise Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Input Resistance Test Conditions VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 12 1950 508 38.4 282 22 15 84 31 66.6 9.9 33 2 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC Forward Transconductance VDS = 15 V, ID = 8 A VGS = 0V, VDS = 0V to 400V VDD =300 V, ID = 8.5 A RG = 4.7 VGS = 10 V (see Figure 20) VDD = 480V, ID = 17 A, VGS = 10V, (see Figure 23) f=1MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain (*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 8: Source Drain Diode Symbol ISD ISDM VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 17 A, VGS = 0 ISD = 17 A, di/dt = 100 A/s VDD = 100 V, Tj = 25C (see Figure 21) ISD = 17A, di/dt = 100 A/s VDD = 100 V, Tj = 150C (see Figure 21) 372 4.6 25 486 6.3 26 Test Conditions Min. Typ. Max. 16 64 1.3 Unit A A V ns C A ns C A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 3/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Figure 3: Safe Operating Area For TO-220/ IPAK/DPAK Figure 6: Thermal Impedance TO-220/IPAK/ DPAK Figure 4: Safe Operating Area For TO-220FP Figure 7: Thermal Impedance For TO-220FP Figure 5: Safe Operating Area For TO-247 Figure 8: Thermal Impedance For TO-247 4/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Figure 9: Output Characteristics Output Characteristics Figure 12: Transfer Characteristics Figure 10: Transconductance Figure 13: Static Drain-Source On Resistance Figure 11: Gate Charge vs Gate-source Voltage Figure 14: Capacitance Variations 5/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Figure 15: Normalized Gate Threshold Voltage vs Temperature Figure 17: Normalized On Resistance vs Temperature Figure 16: Source-Drain Forward Characteristics Figure 18: Normalized BVDSS vs Temperature 6/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Figure 19: Unclamped Inductive Load Test Circuit Figure 22: Unclamped Inductive Wafeform Figure 20: Switching Times Test Circuit For Resistive Load Figure 23: Gate Charge Test Circuit Figure 21: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 9/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 10/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N TO-262 (I2PAK) MECHANICAL DATA mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch 11/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 12/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 G 13/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 14/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Table 9: Revision History Date 22-Sep-2005 05-Oct-2005 26-Oct-2005 Revision 1 2 3 First Release. Modified curves 9-12 Complete version Description of Changes 15/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16 |
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